| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,735 pcs
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1735 pcs | On Request | 1 | On Request | On Request | 9530P/ | On Request | On Request |
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| Tape & Reel |
The SI9955DY-T1 is a Dual N-Channel MOSFET manufactured by Vishay Siliconix. This component is designed for surface mount applications and comes in a standard SOP8 package.
Key electrical characteristics include a drain-to-source voltage (Vds) of 50V and a continuous drain current (Id) of 3A at 25°C. The on-resistance (Rds On) is specified as a maximum of 130 mOhm at 3A and 10V gate-source voltage. The gate threshold voltage (Vgs th) is 1V at 250μA, and the input capacitance (Ciss) is 345pF at 15V.
With an operating temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for various applications requiring reliable power switching. The device also has a maximum power dissipation of 900mW.
This MOSFET is ideal for use in power management circuits, motor control, and other applications where efficient switching is required. Its surface-mount package facilitates integration into compact electronic designs.
The drain-to-source voltage (Vds) for the SI9955DY-T1 is 50V.
The continuous drain current (Id) at 25°C for the SI9955DY-T1 is 3A.
The Rds On is a maximum of 130 mOhm at 3A and 10V.
The operating temperature range for the SI9955DY-T1 is -55°C to 150°C (TJ).
The SI9955DY-T1 is available in a SOP8 package.
The SI9955DY-T1 is Lead free / RoHS Compliant.