SI9945BDY-T1-GE3 The Vishay Dale SI9945BDY-T1-GE3 is a Dual N-Channel MOSFET with a 60V drain-source voltage and 5.3A continuous drain current. It features a low on-resistance of 58mOhm at 10V gate-source voltage.
Mfr Part #:

SI9945BDY-T1-GE3

Available from 6 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI9945BDY-T1-GE3 is a Dual N-Channel MOSFET with a 60V drain-source voltage and 5.3A continuous drain current. It features a low on-resistance of 58mOhm at 10V gate-source voltage.
✓ Total Stock: 96,193 pcs
$ Price Range: $0.99

SI9945BDY-T1-GE3 Available from 6 distributors

✓ Authorised
✓ Non-Authorised

SI9945BDY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI9945BDY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI9945BDY-T1-GE3 is a Dual N-Channel MOSFET designed for power switching applications. It offers a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 5.3A at 25°C.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 58mOhm at 4.3A and 10V Vgs, and a gate charge (Qg) of 20nC typical at 10V Vgs. The gate threshold voltage (Vgs(th)) is 3V at 250µA.

 

This MOSFET is housed in an 8-SOIC package and is designed for surface mounting. It operates within a temperature range of -55°C to +150°C (TJ). The device is suitable for applications such as load switching.

 

Material categorization indicates it is RoHS3 compliant and has an MSL rating of 1.

SI9945BDY-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI9945BDY-T1-GE3 Dual N-Channel MOSFET
Subcategory: Dual N-Channel

SI9945BDY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI9945BDY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI9945BDY-T1-GE3 Features

  • Dual N-Channel MOSFET design
  • 60V drain-source voltage rating
  • 5.3A continuous drain current
  • Low 58mOhm on-resistance
  • 8-SOIC surface mount package

SI9945BDY-T1-GE3 Applications

  • Power management in portable devices.
  • DC-DC converter circuits.
  • Load switching applications.
  • Battery protection circuits.

SI9945BDY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SI9945BDY-T1-GE3?

The minimum drain-source breakdown voltage is 60V.

What is the continuous drain current rating?

The continuous drain current is 5.3A at 25°C case temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 58mOhm at VGS=10V and ID=4.3A.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

What package is the SI9945BDY-T1-GE3 available in?

It is available in an 8-SOIC surface mount package.

Does this device have a logic level gate?

Yes, it features a logic level gate.

What is the gate threshold voltage?

The maximum gate threshold voltage is 3V at ID=250µA.

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