| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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96 pcs
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96 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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88 pcs
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88 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The Vishay Dale SI9945AEY is an N-Channel Power Field-Effect Transistor (FET) built using Silicon Metal-oxide Semiconductor technology. This component is rated for a drain-source voltage of 60V and can handle a continuous drain current of 3.7A. It features a low on-resistance of 0.08 ohms, making it efficient for power switching applications.
The FET is housed in a standard SO-8 package, suitable for surface-mount designs. Its construction as a Metal-oxide Semiconductor FET ensures reliable performance in electronic circuits.
This transistor is designed for applications requiring efficient power control and switching. The N-channel configuration and specific electrical characteristics make it a versatile component for power management solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating for the SI9945AEY is 60V.
The continuous drain current for the SI9945AEY is 3.7A.
The on-resistance of the SI9945AEY is 0.08 ohms.
The SI9945AEY has an N-Channel.
The SI9945AEY is supplied in an SO-8 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.