| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The SI9936DY is an N-Channel Power MOSFET manufactured by On Semiconductor. This component is designed for various applications requiring efficient switching and power control.
Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current of 5A. The MOSFET exhibits a low on-resistance (Rds On) of 50mOhm at 5A and 10V, ensuring minimal power loss during operation. Its gate charge (Qg) is 35nC maximum at 10V, and the gate threshold voltage (Vgs(th)) is 1V maximum at 250µA.
This device operates within a temperature range of -55°C to 150°C (TJ) and has a power dissipation of 900mW. The input capacitance (Ciss) is rated at 525pF maximum at 15V.
The SI9936DY is packaged in an 8-SOIC (0.154", 3.90mm Width) case and utilizes surface mount technology for easy integration into printed circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-SOIC (0.154", 3.90mm Width) surface-mount package.
-55°C to 150°C (junction temperature).
5A.
Maximum 50 mΩ at Vgs=10V, Id=5A.
Maximum 35 nC at Vgs=10V.
Yes, it has surface-mount mounting type in 8-SOIC.