| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
413 pcs
|
413 pcs | On Request | 1 | On Request | On Request | 0613P/ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Halogen Free | |
| Mounting Type | |
| Package / Case | |
| Tape & Reel |
The Vishay Siliconix SI9936BDY-T1-E3 is a Dual N-Channel MOSFET featuring a 30V drain-source voltage rating. It is housed in a compact SO-8 package, suitable for surface mounting.
Key electrical characteristics include a low drain-source on-state resistance, with typical values of 0.035 Ω at VGS = 10V and 4.9A, and 0.052 Ω at VGS = 4.5V and 4.9A. The device supports continuous drain currents up to 6.0A at 25°C ambient temperature.
This MOSFET is designed with features such as halogen-free and lead-free compliance, making it suitable for environmentally conscious designs. The operating junction temperature ranges from -55°C to 150°C.
Applications for this MOSFET can include power switching and general-purpose amplification where a dual N-channel configuration is beneficial. Its robust thermal characteristics and electrical performance make it a reliable component for various electronic circuits.
30V.
SO-8 surface mount package.
-55 to 150°C.
1V typical, 3V maximum at VDS=VGS, ID=250µA.
28 mΩ typical at VGS=10V, ID=6A.
8.6 nC typical at VDS=15V, VGS=10V, ID=6A.
Turn-on delay 10ns typical, rise time 15ns typical, turn-off delay 25ns typical, fall time 10ns typical.