| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,111 pcs
|
1111 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
204 pcs
|
204 pcs | On Request | 1 | On Request | On Request | 0542+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI9936BDY-T1-E3 is a dual N-channel MOSFET with a drain-source voltage rating of 30V. It is designed for efficient power management and switching applications.
This MOSFET offers a continuous drain current of 4.5A at 25°C and a maximum on-state resistance of 35mΩ at 6A and 10V gate-source voltage. The gate threshold voltage is a maximum of 3V at 250µA. It also features a logic level gate for wider compatibility.
Packaged in an 8-SOIC surface mount configuration, the SI9936BDY-T1-E3 is suitable for various electronic designs. The operating temperature range is from -55°C to 150°C. The device is compliant with RoHS standards and has a Moisture Sensitivity Level of 1.
Key electrical characteristics include a gate charge of 13nC maximum at 10V and a maximum power dissipation of 1.1W at 70°C. Dynamic characteristics such as turn-on and turn-off times are also specified, making it suitable for applications requiring fast switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
6A at 25°C ambient.
35mΩ maximum at VGS=10V, ID=6A.
-55°C to 150°C.
8-SOIC (SO-8).
Yes, it is halogen-free.
1V typical, 3V maximum at ID=250µA.