| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
58,520 pcs
|
58520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,848 pcs
|
1848 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request | |
|
1,597 pcs
|
1597 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
20 pcs
|
20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI9933CDY-T1-GE3 is a dual P-Channel MOSFET designed for load switch and DC/DC converter applications. It features a TrenchFET power MOSFET technology and is 100% Rg and UIS tested.
Key electrical specifications include a drain-source breakdown voltage of -20V and a maximum continuous drain current of -4A at 25°C case temperature. The on-resistance is specified as 58mOhm at 4.8A and -4.5V VGS, with a typical gate charge of 8nC at -10V VGS. The device operates over a junction temperature range of -50°C to +150°C.
This MOSFET is available in an 8-SOIC package, suitable for surface mounting. The maximum power dissipation is 3.1W at 25°C case temperature. It is designed with a logic level gate feature, enhancing its versatility in various circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-20V
-4A
58mOhm
8nC
-50°C ~ 150°C
8-SOIC
Surface Mount