| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
401,778 pcs
|
401778 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI9933CDY-T1-E3 is a dual P-channel MOSFET designed for applications such as load switches and DC/DC converters. It features a drain-source voltage of 20V and a continuous drain current rating of 4A at 25°C case temperature.
This MOSFET offers a low on-resistance of 58mOhm at 4.8A and 4.5V Vgs, with a typical gate charge of 8nC. The operating junction and storage temperature range is from -50°C to +150°C. The device is supplied in an 8-SOIC package suitable for surface mounting.
Key electrical characteristics include a gate threshold voltage of 1.4V at 250µA and an input capacitance of 665pF at 10V. The maximum power dissipation is rated at 3.1W at 25°C case temperature. The device is also tested for 100% Rg and UIS.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is -20 V.
The continuous drain current is -4 A at case temperature 25 °C.
The maximum on-resistance is 58 mOhm at VGS = -4.5 V and 94 mOhm at VGS = -2.5 V.
The operating junction and storage temperature range is -50 °C to +150 °C.
The maximum gate threshold voltage is 1.4 V at ID = 250 µA.
Yes, it features a logic-level gate drive capability.
It comes in a 8-SOIC surface-mount package (0.154 inch width, 3.90 mm).