| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
120,533 pcs
|
120533 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
873 pcs
|
873 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Gate Charge | |
| Halogen Free | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Tape & Reel |
The Vishay Siliconix SI9933CDY is a dual P-Channel MOSFET designed for load switch and DC/DC converter applications. It offers a drain-source breakdown voltage of -20V and a gate-source voltage rating of ±12V.
Key electrical characteristics include a maximum drain-source on-resistance (RDS(on)) of 0.058Ω at VGS = -4.5V and 0.094Ω at VGS = -2.5V. The typical gate charge (Qg) is 8nC. Continuous drain current is rated up to -4A depending on the thermal conditions.
This MOSFET is available in an SO-8 Dual package, suitable for surface mounting. Thermal performance includes a maximum junction-to-ambient thermal resistance of 62.5°C/W and a junction-to-foot thermal resistance of 40°C/W.
The device is tested for Rg and UIS, and features TrenchFET® power MOSFET technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -20 V.
The maximum gate-source voltage is ±12 V.
The maximum continuous drain current is -4 A at TC = 25 °C and TJ = 150 °C.
The maximum pulsed drain current is -20 A with a 10 μs pulse width.
The maximum power dissipation is 3.1 W at TC = 25 °C.
The typical gate charge is 8 nC.
The package type is SO-8 Dual.