SI9933BDY-T1-E3 The Vishay Dale SI9933BDY-T1-E3 is a dual P-channel MOSFET with a 20V drain-source voltage and 3.6A continuous current. It is supplied in an 8-SOIC package for surface mounting.
Mfr Part #:

SI9933BDY-T1-E3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI9933BDY-T1-E3 is a dual P-channel MOSFET with a 20V drain-source voltage and 3.6A continuous current. It is supplied in an 8-SOIC package for surface mounting.
✓ Total Stock: 204,104 pcs
$ Price Range: $0.99

SI9933BDY-T1-E3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SI9933BDY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

SI9933BDY-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI9933BDY-T1-E3 is a dual P-channel MOSFET designed for various electronic applications. It offers a drain-source voltage (Vdss) of 20V and a continuous drain current of 3.6A. The on-resistance (Rds On) is specified as a maximum of 60mOhm at 4.7A and 4.5V.

 

This MOSFET features a logic level gate, making it suitable for low-voltage control applications. The gate charge (Qg) is a maximum of 9nC at 4.5V, and the gate threshold voltage (Vgs(th)) is a maximum of 1.4V at 250µA. It has a power dissipation rating of 1.1W.

 

The device operates within a temperature range of -55°C to 150°C (TJ). It is packaged in an 8-SOIC (0.154", 3.90mm Width) case and is designed for surface mounting.

 

Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are based on existing database information and may require verification.

SI9933BDY-T1-E3 Quick Information

Product Type: MOSFET Array
Canonical Name: Vishay Dale SI9933BDY-T1-E3 Dual P-Channel MOSFET
Subcategory: Dual P-Channel

SI9933BDY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI9933BDY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI9933BDY-T1-E3 Features

  • Dual P-channel MOSFET configuration.
  • 20V drain-source voltage rating.
  • 3.6A continuous drain current.
  • Low 60mOhm maximum on-resistance.
  • Logic level gate for control applications.

SI9933BDY-T1-E3 Applications

  • Suitable for low-voltage power switching.
  • Ideal for battery management circuits.
  • Used in load switch applications.
  • Applicable in DC-DC converters.

SI9933BDY-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain to source voltage of SI9933BDY-T1-E3?

The maximum drain to source voltage is 20V.

What is the package type of SI9933BDY-T1-E3?

It comes in an 8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the operating temperature range for SI9933BDY-T1-E3?

The operating junction temperature ranges from -55°C to 150°C.

What is the maximum Rds(on) of SI9933BDY-T1-E3?

The maximum on-resistance is 60mOhm at 4.7A drain current and 4.5V gate voltage.

What is the typical gate charge of SI9933BDY-T1-E3?

The maximum gate charge is 9nC at 4.5V gate voltage.

What is the gate threshold voltage of SI9933BDY-T1-E3?

The maximum gate threshold voltage is 1.4V at 250µA drain current.

Home
Account

Categories