| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
468 pcs
|
468 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Number of Channels | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Transistor Type | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI9926CDY-T1-E3 is a dual N-channel MOSFET designed for power applications. It features a 20V drain-source breakdown voltage and a maximum continuous drain current of 8A. The Rds On is specified at 18mOhm at a gate-source voltage of 4.5V.
This MOSFET utilizes TrenchFET technology and is suitable for logic-level gate applications. It operates within a temperature range of -55°C to 150°C.
The device is housed in an 8-SOIC package, designed for surface mounting. The typical gate charge is 33nC at 10V, and the gate-source threshold voltage is a maximum of 1.5V at 250µA.
Applications include DC/DC converters, game machines, and PCs. The product summary indicates a maximum power dissipation of 3.1W at 25°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 20V at VGS = 0V and ID = 250µA.
The continuous drain current is 8A at a case temperature of 25°C.
The maximum on-resistance is 18mOhm at VGS = 4.5V and ID = 8.3A.
The SI9926CDY-T1-E3 is available in an SO-8 surface-mount package.
The operating junction temperature range is -55°C to 150°C.
The maximum gate charge is 33nC at VGS = 10V.
The maximum input capacitance is 1200pF at VDS = 10V.