| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,578 pcs
|
1578 pcs | On Request | 1 | On Request | On Request | 829 | On Request | On Request | |
|
666 pcs
|
666 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The SI9926BDY-T1-E3 from Vishay Dale is a dual N-channel MOSFET array housed in an 8-SOIC package. This device is designed for surface mount applications and features a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 6.2A. Its on-resistance (Rds On) is rated at a maximum of 20mOhm at 8.2A and 4.5V gate-source voltage. The MOSFET operates within a temperature range of -55°C to 150°C (TJ).
This component utilizes MOSFET (Metal Oxide) technology and is characterized by its logic level gate feature. It has a gate charge (Qg) of 20nC maximum at 4.5V and a gate threshold voltage (Vgs(th)) of 1.5V maximum at 250µA. The power dissipation is 1.14W. The 8-SOIC package is suitable for various electronic designs requiring compact surface-mount components.
Compliance information indicates RoHS3 compliance, MSL 1 Unlimited, and REACH unaffected status, though these are currently unverified. The part is available in a Tape & Reel (TR) configuration with a standard package quantity of 75 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-55°C to 150°C (TJ).
8-SOIC surface mount package.
20V.
6.2A.
20mOhm maximum at 8.2A drain current and 4.5V gate-source voltage.
Yes, it features a logic level gate with maximum threshold voltage of 1.5V at 250µA.
20nC maximum at Vgs=4.5V.