SI9910DY-T1-E3 SI9910DY-T1-E3 is a high-side gate driver IC from Vishay Dale in an 8-SOIC package. It supports up to 500V high-side voltage, 1A peak current, and operates from -40°C to 85°C.
Mfr Part #:

SI9910DY-T1-E3

Available from 3 distributors
Mfr Name: Vishay
Vishay
SI9910DY-T1-E3 is a high-side gate driver IC from Vishay Dale in an 8-SOIC package. It supports up to 500V high-side voltage, 1A peak current, and operates from -40°C to 85°C.
Total Stock: 75,094 pcs
$ Price Range: $2.01

SI9910DY-T1-E3 Available from 3 distributors

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60,267 pcs
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11,589 pcs
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SI9910DY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Channel Type
Current
Driven Configuration
Gate Type
High Side Voltage
Input Type
Junction Temperature
Mounting Type
Number of Drivers
Operating Temperature
Rise
Storage Temperature
Supplier Device Package
Voltage

SI9910DY-T1-E3 Description

Short technical summary and product information.

The SI9910DY-T1-E3 is a high-side gate driver integrated circuit manufactured by Vishay Dale. It is designed to control N-channel MOSFETs or IGBTs in high-side switching applications, providing the necessary gate drive voltage and current. The device is housed in an 8-SOIC package for surface-mount assembly.

 

The driver operates with a supply voltage range from -0.3 V to 18 V and supports high-side voltages up to 500 V. It delivers up to 1 A of peak output current, with fast rise and fall times of 50 ns and 35 ns, respectively. The maximum input current is 20 mA, and the power dissipation is rated at 700 mW for the 8-SOIC package.

 

With its high voltage capability and fast switching speeds, the SI9910DY-T1-E3 is suitable for power conversion, motor control, and industrial automation systems. It is designed to operate over a temperature range of -40°C to +85°C, making it reliable for demanding environments. The compact 8-SOIC footprint supports space-efficient PCB layouts.

SI9910DY-T1-E3 Quick Information

Product Type: Gate Driver IC
Canonical Name: High-Side Gate Driver IC
Subcategory: High-Side Gate Driver

SI9910DY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI9910DY-T1-E3 Estimated Pricing

Qty Low High
1+ $2.01 $2.01

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI9910DY-T1-E3 Features

  • High-side voltage rating up to 500V.
  • Provides peak output current of 1A.
  • Supply voltage range -0.3V to 18V.
  • Fast rise and fall times 50ns/35ns.
  • Available in 8-SOIC surface-mount package.

SI9910DY-T1-E3 Applications

  • High-side MOSFET and IGBT gate driving.
  • Power converters and switching power supplies.
  • Motor control and inverter applications.
  • Industrial power management systems.

SI9910DY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the supply voltage range of the SI9910DY-T1-E3?

The VDD supply range is -0.3 V to 18 V.

What is the operating temperature range?

The operating temperature range is -40°C to +85°C.

What package does the SI9910DY-T1-E3 come in?

It comes in an 8-SOIC surface-mount package.

What is the high-side voltage rating?

The high-side voltage rating is 500 V.

What is the peak output current?

The peak output current is 1 A.

What are the rise and fall times?

The rise and fall times are 50 ns and 35 ns, respectively.

What is the maximum power dissipation?

The maximum power dissipation is 700 mW in the 8-SOIC package.

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