SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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200 pcs
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200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SI9529DY from Vishay Dale is a versatile dual MOSFET featuring both N-channel and P-channel configurations within a single SO-8 package. This device is rated for 2.5V (G-S) operation and provides distinct electrical characteristics for each channel type.
The N-channel MOSFET offers a drain-source voltage (VDS) of 20V and a typical on-state resistance (rDS(on)) as low as 0.03 Ω at VGS = 4.5V, with a continuous drain current (ID) of up to 6A. The P-channel MOSFET supports a VDS of -12V and a typical rDS(on) of 0.05 Ω at VGS = -4.5V, with an ID of up to 5A.
Key electrical parameters include a gate threshold voltage (VGS(th)) of 0.6V for the N-channel and -0.6V for the P-channel. Dynamic characteristics such as total gate charge (Qg) are also specified, contributing to its suitability for switching applications. The device operates within a junction and storage temperature range of -55°C to 150°C.
Packaged in the common SO-8 surface-mount form factor, the SI9529DY is designed for efficient integration into various electronic circuits requiring complementary MOSFET functionality.
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Estimated market price range - modelled values for guidance only, not live distributor offers.
The N-channel drain-source voltage (VDS) is 20V.
The P-channel drain-source voltage (VDS) is -12V.
The typical on-state resistance (rDS(on)) for the N-channel at VGS = 4.5V and ID = 6A is 0.03 Ω.
The typical on-state resistance (rDS(on)) for the P-channel at VGS = -4.5V and ID = -5A is 0.05 Ω.
The SI9529DY is supplied in an SO-8 package.
