| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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16 pcs
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16 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI9435BDY-T1-GE3 is a P-Channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 4.1A at 25°C ambient temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 42mOhm when driven at 10V with a drain current of 5.7A. The gate charge (Qg) is 24nC at 10V, and the gate-to-source voltage (Vgs) has a maximum rating of ±20V. The gate threshold voltage (Vgs(th)) is 3V at 250µA.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1.3W at 25°C. It is constructed using MOSFET (Metal Oxide) technology.
The device is supplied in an 8-SOIC package with a surface mount type. The package dimensions are 0.154" (3.90mm) in width.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 30V.
The continuous drain current (Id) is 4.1A at 25°C.
The maximum on-resistance (Rds On) is 42mOhm at 5.7A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 150°C (TJ).
This MOSFET is designed for surface mounting.