| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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200,889 pcs
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200889 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI9433BDY-T1-GE3 is a single P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 4.5A at ambient temperature.
The MOSFET has a maximum on-resistance (Rds On) of 40mOhm when operating at 6.2A drain current and 4.5V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 1.5V at 250µA gate current. It supports a gate-to-source voltage (Vgs) of up to ±12V.
This device operates within a temperature range of -55°C to 150°C (TJ). It has a maximum power dissipation of 1.3W at ambient temperature. The MOSFET utilizes MOSFET (Metal Oxide) technology.
Packaged in an 8-SOIC (0.154", 3.90mm Width) case, the SI9433BDY-T1-GE3 is designed for surface mount installation. Its specifications make it suitable for power switching and control applications where a P-Channel MOSFET is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
4.5A at ambient temperature.
40mOhm maximum at 6.2A drain current and 4.5V gate drive.
1.5V maximum at 250µA drain current.
-55°C to 150°C junction temperature.
8-SOIC surface-mount package.
14nC at 4.5V gate-source voltage.