SI9433BDY-T1-E3 The Vishay Dale SI9433BDY-T1-E3 is a P-Channel MOSFET designed for surface mounting. It features a 20V drain-to-source voltage and a maximum continuous drain current of 4.5A.
Mfr Part #:

SI9433BDY-T1-E3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI9433BDY-T1-E3 is a P-Channel MOSFET designed for surface mounting. It features a 20V drain-to-source voltage and a maximum continuous drain current of 4.5A.
✓ Total Stock: 8,770 pcs
$ Price Range: $0.99

SI9433BDY-T1-E3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

SI9433BDY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI9433BDY-T1-E3 Description

Short technical summary and product information.

This Vishay Dale SI9433BDY-T1-E3 is a P-Channel MOSFET suitable for various electronic applications. It operates with a drain-to-source voltage of 20V and can handle a continuous drain current of 4.5A at 25°C.

 

The MOSFET has a low on-resistance of 40mOhm at 6.2A and 4.5V gate-source voltage, ensuring efficient power transfer. It is designed for surface mounting and comes in an 8-SOIC package, measuring 0.154 inches (3.90mm) in width.

 

Key electrical characteristics include a gate charge of 14 nC at 4.5V and a gate threshold voltage of 1.5V at 250µA. The operating temperature range is from -55°C to 150°C.

 

This component is manufactured using MOSFET technology and is RoHS3 compliant. Its compact size and surface-mount capability make it ideal for integration into space-constrained designs.

SI9433BDY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI9433BDY-T1-E3 P-Channel MOSFET
Subcategory: Single

SI9433BDY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI9433BDY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI9433BDY-T1-E3 Features

  • P-Channel MOSFET with 20V drain-source voltage.
  • 6.2A continuous drain current at 25°C.
  • 40mOhm maximum on-resistance at 4.5V drive.
  • Surface-mount 8-SOIC package for compact designs.
  • Operates from -55°C to 150°C junction temperature.

SI9433BDY-T1-E3 Applications

  • Ideal for load switching in portable devices.
  • Used in power management for battery-powered systems.
  • Suitable for DC-DC converter output switching.
  • Applicable in low-voltage motor control circuits.

SI9433BDY-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SI9433BDY-T1-E3?

The maximum drain-source voltage (Vdss) is 20V.

What is the continuous drain current rating?

The continuous drain current is 6.2A at 25°C ambient temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 40 milliohms at a gate drive of 4.5V and drain current of 6.2A.

What package type is the SI9433BDY-T1-E3 available in?

It is available in an 8-SOIC surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What is the maximum gate threshold voltage?

The maximum gate threshold voltage is 1.5V at a drain current of 250µA.

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