| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,447 pcs
|
8447 pcs | On Request | 1 | On Request | On Request | 00+ | On Request | On Request | |
|
8,425 pcs
|
8425 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Spacing | |
| Lead Style | |
| Power Dissipation |
The SI9430DY-T1 is a P-Channel MOSFET designed for applications requiring efficient power switching. It features a maximum Drain-Source Voltage of 20V and a continuous drain current capability of up to 20A (package limited) or 13A (TC=25C). The device boasts a low on-state resistance, with values as low as 0.015Ω at VGS = -4.5V.
This MOSFET is housed in an SO-8 package, suitable for surface mounting. It operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 19W at 25°C case temperature. The device includes built-in ESD protection with typical performance of 1800V.
Key features include its TrenchFET Power MOSFET technology and compliance with RoHS Directive 2002/95/EC. Applications include load switches, battery switches, and charger switches in portable devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage is 20V.
The maximum continuous drain current is 20A (package limited) or 13A (TC=25C).
The package type is SO-8.
The maximum power dissipation is 19W.
The operating junction and storage temperature range is -55°C to 150°C.
The typical Drain-Source On-State Resistance at VGS = -4.5V, ID = -5.6A is 0.015 to 0.018 Ω.
Yes, it has built-in ESD protection with a typical performance of 1800V.