| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,288 pcs
|
3288 pcs | On Request | 1 | On Request | On Request | 1517+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SI9424BDY-T1-GE3 is a P-Channel MOSFET from the TrenchFET series, designed for efficient power switching. It features a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 5.6A at 25°C ambient temperature.
Key electrical characteristics include a low on-state resistance (Rds On) of 25mOhm at 7.1A and 4.5V gate-source voltage, and a gate threshold voltage (Vgs(th)) of 850mV maximum at 250µA. The device supports drive voltages of 2.5V and 4.5V. Its maximum power dissipation is rated at 1.25W (Ta) in an 8-SOIC package.
Operating across a temperature range of -55°C to 150°C (TJ), the SI9424BDY-T1-GE3 is suitable for various power management applications. It is surface-mounted and comes in an 8-SOIC package, facilitating integration into compact electronic designs. The component is compliant with RoHS3 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 20V.
The continuous drain current is 5.6A at 25°C ambient temperature.
The Rds On is a maximum of 25mOhm at 7.1A drain current and 4.5V gate-source voltage.
The operating temperature range is -55°C to 150°C (TJ).
It is supplied in an 8-SOIC package.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.