Mfr Part #:

SI9410BDY-T1-E3

Name: SI9410BDY-T1-E3
Brand: Vishay
SKU: SI9410BDY-T1-E3
Availability: InStock

Mfr Name: Vishay

Description:

MOSFET N-CH 30V 6.2A 8SO

✓ Total Stock: 648,194 pcs

SI9410BDY-T1-E3 Available from 4 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Speed Components Ltd ✓ Non-Authorised Inventory information	80 pcs On Request	80 pcs	On Request	1	On Request	On Request	1970-01-01 00:16:42	On Request	On Request
Braun Electronic Components ✓ Non-Authorised Inventory information	1,200 pcs On Request	1200 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
RAD ✓ Non-Authorised Inventory information	1,200 pcs On Request	1200 pcs	On Request	1	On Request	On Request	1970-01-01 00:18:47	On Request	On Request
Romaks Technologies ✓ Non-Authorised Inventory information	645,714 pcs On Request	645714 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

Short technical summary and product information.

MOSFET N-CH 30V 6.2A 8SO

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Same form/fit/function or matching attribute configuration across different manufacturers.

Vishay Siliconix

MOSFET N-CH 30V 6.2A 8SO

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	6.2A (Ta)
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	1.5W (Ta)
Rds On (Max) @ Id, Vgs	24mOhm @ 8.1A, 10V
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3V @ 250µA