| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
645,714 pcs
|
645714 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
107 pcs
|
107 pcs | On Request | 1 | On Request | On Request | 1321+ | On Request | On Request | |
|
80 pcs
|
80 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from Vishay Siliconix, part number SI9410BDY-T1-E3, is suitable for various electronic applications requiring efficient switching. It offers a drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 6.2A at ambient temperature.
The device has a low on-resistance (Rds On) of 24mOhm at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 8.1A. The gate charge (Qg) is 23 nC maximum at 10V Vgs, and the gate threshold voltage (Vgs(th)) is 3V maximum at 250µA.
Designed for surface mounting, the SI9410BDY-T1-E3 comes in an 8-SOIC package with dimensions of 0.154 inches (3.90mm) width. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1.5W at ambient temperature. The MOSFET technology is Metal Oxide.
Key electrical characteristics include a maximum gate-to-source voltage (Vgs) of ±20V and drive voltages of 4.5V and 10V for maximum and minimum Rds On, respectively.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-SOIC surface mount package.
-55°C to 150°C junction temperature.
24mOhm maximum at 8.1A and 10V gate drive.
3V maximum at 250µA drain current.
6.2A at ambient temperature.
23nC at 10V gate-source voltage.