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13,050 pcs
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13050 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The Vishay SI9407BDY-T1-GE3 is a P-Channel power MOSFET designed for applications such as primary side switching. It features a drain-source breakdown voltage of -60V and a gate-source voltage rating of ±20V.
The MOSFET offers a maximum on-resistance of 0.120 Ω at a gate-source voltage of -10V and 0.150 Ω at -4.5V. The continuous drain current is rated at -4.7A at 25°C case temperature.
This device is housed in a standard SO-8 package, suitable for surface mounting. The operating junction and storage temperature range is from -55°C to +150°C. It is also noted for its TrenchFET® power MOSFET technology and 100% UIS tested.
Key electrical characteristics include a typical gate charge of 8 nC. Thermal resistance ratings include a junction-to-ambient of 42°C/W typical and junction-to-foot of 19°C/W typical.
The drain-source breakdown voltage is -60 V (minimum) at VGS = 0 V, ID = -250 μA.
The maximum continuous drain current is -4.7 A at TC = 25 °C, -3.8 A at TC = 70 °C, -3.2 A at TA = 25 °C, and -2.6 A at TA = 70 °C.
The maximum RDS(on) is 0.12 Ω at VGS = -10 V and 0.15 Ω at VGS = -4.5 V.
The operating junction and storage temperature range is -55 to +150 °C.
It is available in an SO-8 surface-mount package.
The typical gate charge is 8 nC.
The maximum power dissipation is 5 W at TC = 25 °C, 3.2 W at TC = 70 °C, 2.4 W at TA = 25 °C, and 1.5 W at TA = 70 °C.