| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
272,500 pcs
|
272500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
190,316 pcs
|
190316 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
33,520 pcs
|
33520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
17,630 pcs
|
17630 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,272 pcs
|
2272 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,515 pcs
|
1515 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Number of Channels | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SI9407BDY-T1-GE3 is a P-Channel power MOSFET designed for primary side switching applications. It features a TrenchFET construction for enhanced performance.
Key electrical specifications include a drain-source breakdown voltage of 60V and a continuous drain current of 4.7A at 25°C case temperature. The on-resistance (RDS(on)) is a maximum of 120mΩ at 10V gate-source voltage and 3.2A drain current. The typical gate charge (Qg) is 8nC.
This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in an 8-SOIC package, suitable for surface mounting. The maximum power dissipation is 5W when the case temperature is 25°C and 2.4W when the ambient temperature is 25°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V.
The continuous drain current is 4.7A.
The maximum Rds On is 120mΩ at 10V Vgs and 3.2A Id.
The typical gate charge is 8nC.
The operating temperature range is -55°C to 150°C.
It is supplied in an 8-SOIC surface mount package.