SI9407BDY-T1-E3 The Vishay Dale SI9407BDY-T1-E3 is a P-Channel MOSFET with a 60V drain-source voltage rating. It offers a continuous drain current of 4.7A and is housed in an 8-SOIC package.
Mfr Part #:

SI9407BDY-T1-E3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI9407BDY-T1-E3 is a P-Channel MOSFET with a 60V drain-source voltage rating. It offers a continuous drain current of 4.7A and is housed in an 8-SOIC package.
✓ Total Stock: 16,179 pcs
$ Price Range: $0.99

SI9407BDY-T1-E3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SI9407BDY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI9407BDY-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI9407BDY-T1-E3 is a P-Channel TrenchFET power MOSFET designed for primary side switching applications. It features a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 4.7A at 25°C case temperature.

 

Key electrical characteristics include a low on-resistance (Rds On) of 120mΩ at 10V gate-source voltage and 3.2A drain current, and a typical gate charge (Qg) of 8nC. The device operates over a wide temperature range of -55°C to 150°C.

 

This MOSFET is available in an 8-SOIC surface-mount package, making it suitable for various electronic designs. Its robust construction and tested performance make it a reliable choice for power management circuits.

 

Applications include primary side switching. The device is RoHS3 compliant and has an MSL 1 rating.

SI9407BDY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI9407BDY-T1-E3 P-Channel 60V MOSFET
Subcategory: P-Channel

SI9407BDY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI9407BDY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI9407BDY-T1-E3 Features

  • P-Channel TrenchFET power MOSFET.
  • 60V drain-source voltage rating.
  • 4.7A continuous drain current.
  • Low Rds On: 120mΩ at 10V.
  • Surface mount 8-SOIC package.

SI9407BDY-T1-E3 Applications

  • Primary side switching applications.
  • Power management circuits.
  • General purpose switching.

SI9407BDY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI9407BDY-T1-E3?

The maximum drain-source voltage is 60V.

What is the continuous drain current rating?

The continuous drain current is 4.7A at 25°C case temperature.

What is the Rds On (Max) at Vgs = 10V?

The Rds On (Max) at Vgs = 10V is 0.120 Ohms.

What is the typical gate charge (Qg)?

The typical gate charge is 8 nC.

What type of package is the SI9407BDY-T1-E3 in?

It is in an 8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

Is this product RoHS compliant?

Yes, it is RoHS3 Compliant.

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