| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,020 pcs
|
7020 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request | |
|
2,196 pcs
|
2196 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Vishay Dale SI9407AEY-T1-E3 is a P-Channel MOSFET designed for various electronic applications. It features a drain-source voltage of -60V and a gate-source voltage of ±20V.
Key electrical specifications include a maximum continuous drain current of -3.2A at 25°C and -2.6A at 70°C. The pulsed drain current can reach -20A. Its on-state resistance is a maximum of 0.120Ω at a gate-source voltage of -10V and 0.150Ω at -4.5V.
This MOSFET operates within a junction and storage temperature range of -55°C to 150°C. It is housed in an SO-8 package, suitable for surface-mount applications.
Additional parameters include a gate-threshold voltage between 1V and 3V, a gate-body leakage of ±100nA, and a zero gate voltage drain current of 1µA. The forward transconductance is typically 8.5S, and the diode forward voltage is a maximum of 1.2V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.54 | $2.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-60V
-3.2A
0.120Ω
-55°C to 150°C
SO-8