| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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60 pcs
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60 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SI9407AEY is a P-Channel MOSFET manufactured by Vishay Siliconix. This device is rated for a drain-source voltage (VDS) of -60V and a continuous drain current (ID) of up to -3.5A at 25°C.
Key electrical characteristics include a low drain-source on-resistance (rDS(on)) of 0.120 Ohms at VGS = -10V and ID = 3.5A, and 0.150 Ohms at VGS = -4.5V and ID = 3.1A. The gate threshold voltage (VGS(th)) is -1V. The device operates over a wide temperature range from -55°C to 175°C.
Packaged in an SO-8 surface-mount package, the SI9407AEY is suitable for various power management and switching applications where space efficiency and performance are critical. Its thermal resistance is rated at 50°C/W junction-to-ambient.
This MOSFET is designed for applications requiring efficient power control and switching. Its specifications make it suitable for use in power supplies, motor control, and other general-purpose power electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating for the SI9407AEY is -60 V.
The typical on-resistance of the SI9407AEY at VGS = -10V and ID = 3.5A is 0.120 Ω.
The maximum continuous drain current for the SI9407AEY at 25°C is -3.5 A.
The operating junction and storage temperature range for the SI9407AEY is -55 to 175 °C.
The SI9407AEY is available in an SO-8 package.