| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,565 pcs
|
2565 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The SI8904EDB-T2-E1 from Vishay Dale is a dual N-channel MOSFET with a logic level gate, suitable for various electronic designs. It features a drain-to-source voltage (Vdss) of 30V and can handle a continuous current of 3.8A. The device operates within a temperature range of -55°C to 150°C (TJ) and has a power dissipation of 1W.
This MOSFET is packaged in a compact 6-Micro Foot®CSP (2.36x1.56) and is designed for surface mounting. Its configuration includes two N-channel transistors with a common drain, and it requires a gate threshold voltage (Vgs(th)) of 1.6V at 250µA. The component is RoHS3 compliant and has an MSL rating of 1.
With its specific electrical characteristics and compact package, the SI8904EDB-T2-E1 is suited for applications requiring efficient switching and power management in space-constrained environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
3.8A.
-55°C to 150°C.
6-Micro Foot CSP (surface mount).
1.6V at 250µA.
1W.