SI8901EDB-T2-E1 The Vishay Dale SI8901EDB-T2-E1 is a dual P-channel MOSFET array designed for various electronic applications. It offers a 20V drain-to-source voltage and a continuous drain current of 3.5A.
Mfr Part #:

SI8901EDB-T2-E1

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI8901EDB-T2-E1 is a dual P-channel MOSFET array designed for various electronic applications. It offers a 20V drain-to-source voltage and a continuous drain current of 3.5A.
✓ Total Stock: 12,283 pcs
$ Price Range: $0.99

SI8901EDB-T2-E1 Available from 3 distributors

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✓ Non-Authorised
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8,000 pcs
8000 pcs On Request 1 On Request On Request 24+ On Request On Request
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2,985 pcs
2985 pcs On Request 1 On Request On Request On Request On Request On Request
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1,298 pcs
1298 pcs On Request 1 On Request On Request 1318 On Request On Request

SI8901EDB-T2-E1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Mounting Type
Operating Temperature
Power
SVHC Present
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI8901EDB-T2-E1 Description

Short technical summary and product information.

The Vishay Dale SI8901EDB-T2-E1 is a dual P-channel MOSFET array belonging to the TrenchFET® series. This component is designed for surface mount applications and features a drain-to-source voltage (Vdss) of 20V.

 

With a continuous drain current (Id) of 3.5A at 25°C, this MOSFET array is suitable for power management and switching applications. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1W. The gate threshold voltage (Vgs(th)) is specified at 1V @ 350µA, and it features logic level gate functionality.

 

The device is housed in a compact 6-MICRO FOOT®CSP package, with a supplier device package size of 6-Micro Foot™ (2.36x1.56). It is supplied in cut tape packaging.

 

This MOSFET array is RoHS3 compliant and has an MSL rating of 1.

SI8901EDB-T2-E1 Quick Information

Product Type: MOSFET Array
Series: TrenchFET®
Canonical Name: Vishay Dale SI8901EDB-T2-E1 Dual P-Channel Logic Level MOSFET
Subcategory: Dual P-Channel

SI8901EDB-T2-E1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI8901EDB-T2-E1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI8901EDB-T2-E1 Features

  • Dual P-channel MOSFET array.
  • 20V drain-to-source voltage.
  • 3.5A continuous drain current.
  • Logic level gate functionality.
  • Surface mount 6-Micro Foot™ package.

SI8901EDB-T2-E1 Applications

  • For load switching in low-voltage circuits.
  • Used in power management for portable devices.
  • Suitable for battery protection circuits.
  • Ideal for power distribution in small electronics.

SI8901EDB-T2-E1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating?

20V.

What is the continuous drain current rating?

3.5A at 25°C.

What is the maximum power dissipation?

1W.

What is the operating temperature range?

-55°C to 150°C (junction).

What is the gate threshold voltage?

1V maximum at 350µA.

What package does this MOSFET come in?

6-Micro Foot™ (2.36x1.56) chip-scale package.

What is the FET type?

2 P-Channel (Dual) Common Drain with Logic Level Gate.

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