| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
19,020 pcs
|
19020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7,953 pcs
|
7953 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI8851EDB-T2-E1 is a P-Channel MOSFET designed for power management applications. It features a 20V drain-source voltage and a low on-resistance of 8 mΩ at 7A and 4.5V Vgs. The device operates within a temperature range of -55°C to 150°C.
This MOSFET is suitable for battery and load switching applications. It comes in a compact 2.4 mm x 2 mm Power Micro Foot® package with a low profile of 0.4 mm. The typical ESD protection is 6000 V HBM.
Key electrical characteristics include a continuous drain current of 7.7A at 25°C ambient temperature and a gate charge of 70 nC typical. The input capacitance is 6900 pF maximum. The device is RoHS3 compliant and halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is -20 V.
The device is housed in a 30-XFBGA Power Micro Foot® (2.4x2) package, surface mount.
The operating junction temperature range is -55°C to 150°C.
The continuous drain current is -16.7 A at 25°C ambient on a 1 inch² pad, and -7.7 A at 25°C ambient on minimal pad.
The typical on-resistance is 8 mΩ at VGS = -4.5 V, 8.6 mΩ at -3.7 V, 11 mΩ at -2.5 V, and 18.5 mΩ at -1.8 V.
The maximum gate threshold voltage is 1 V at a drain current of 250 µA.