SI8821EDB-T2-E1 This single P-Channel MOSFET delivers a 30V drain-source voltage rating and 1.6A continuous drain current in a compact 4-Microfoot surface-mount package.
Mfr Part #:

SI8821EDB-T2-E1

Available from 1 distributors
Mfr Name: Vishay
Vishay
This single P-Channel MOSFET delivers a 30V drain-source voltage rating and 1.6A continuous drain current in a compact 4-Microfoot surface-mount package.
✓ Total Stock: 300 pcs
$ Price Range: $0.99

SI8821EDB-T2-E1 Available from 1 distributor

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✓ Non-Authorised
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SI8821EDB-T2-E1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI8821EDB-T2-E1 Description

Short technical summary and product information.

The SI8821EDB-T2-E1 is a single P-Channel enhancement mode MOSFET manufactured by Vishay Dale. Designed for efficient power switching applications, it provides a maximum drain-to-source voltage of 30V and supports a continuous drain current of 1.6A at 25°C ambient temperature. The device exhibits a low on-resistance of 135mΩ at 4.5V gate drive, minimizing conduction losses in high-frequency circuits.

 

Operating with a gate threshold voltage up to 1.3V, this component integrates well into logic-level control systems. It features a maximum gate charge of 17nC and an input capacitance of 440pF, ensuring fast switching transitions. The unit operates reliably across a junction temperature range of -55°C to 150°C and includes 1400V HBM ESD protection for robust handling.

 

Housed in a 4-Microfoot (4-XFBGA) surface-mount package, the SI8821EDB-T2-E1 offers a compact footprint ideal for space-constrained designs. With a maximum power dissipation of 500mW, it suits portable electronics, battery-powered devices, and low-power motor control applications requiring reliable P-channel switching.

SI8821EDB-T2-E1 Quick Information

Product Type: Single P-Channel MOSFET
Canonical Name: P-Channel Enhancement Mode MOSFET
Subcategory: P-Channel Enhancement Mode

SI8821EDB-T2-E1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI8821EDB-T2-E1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI8821EDB-T2-E1 Features

  • Rated for 30V drain-source voltage operation.
  • Delivers 1.6A continuous drain current capability.
  • Features low 135mΩ on-resistance at 4.5V Vgs.
  • Includes 1400V HBM electrostatic discharge protection.
  • Operates reliably within -55°C to 150°C junction temperatures.

SI8821EDB-T2-E1 Applications

  • Ideal for portable battery-powered device switching.
  • Used in low-power motor control driver circuits.
  • Suitable for DC-DC converter load switch designs.
  • Applied in automotive sensor interface protection stages.

SI8821EDB-T2-E1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for this MOSFET?

The maximum drain-source voltage is 30V.

What package type does the SI8821EDB-T2-E1 use?

It utilizes a 4-Microfoot surface-mount package.

What is the operating temperature range for this component?

The junction temperature range spans from -55°C to 150°C.

What is the continuous drain current rating at 25°C?

The continuous drain current is rated at 1.6A at 25°C ambient temperature.

What is the typical ESD protection level for this part?

The device provides 1400V HBM ESD protection.

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