Mfr Part #:

SI8817DB-T2-E1

Mfr Name: Siliconix

The Vishay Siliconix SI8817DB-T2-E1 is a P-Channel MOSFET designed for various applications. It offers a -20V drain-source breakdown voltage and a continuous drain current of 2.9A.

✓ Total Stock: 195 pcs

$ Price Range: $2.60

SI8817DB-T2-E1 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Bristol Electronics ✓ Non-Authorised Inventory information	195 pcs On Request	195 pcs	On Request	1	On Request	On Request	2026-02-25 06:16:38	On Request	On Request

SI8817DB-T2-E1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Siliconix
Gate Charge	7.5nC
Mounting Style	SMD/SMT
Operating Temperature	-55°C / +150°C
Power Dissipation	0.9W

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SI8817DB-T2-E1 Description

Short technical summary and product information.

The Vishay Siliconix SI8817DB-T2-E1 is a P-Channel MOSFET belonging to the Trenchfet series. It features a drain-source breakdown voltage of -20V and can handle a continuous drain current of 2.9A.

This MOSFET has an Rds On of 76 mOhms and a gate charge of 7.5 nC. The minimum operating temperature is -55°C, and the maximum is +150°C. It is packaged in a MICRO-FOOT 0.8 x 0.8 case and is suitable for SMD/SMT mounting.

The device is manufactured by Vishay Siliconix and is part of their P-Channel Gen III family. It is supplied on a reel with a factory pack quantity of 3000 units.

SI8817DB-T2-E1 Quick Information

Product Type: MOSFET

Series: P-Channel Gen Iii

Canonical Name: Vishay SI8817DB-T2-E1 P-Channel MOSFET

Subcategory: P-Channel

SI8817DB-T2-E1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

SI8817DB-T2-E1 Estimated Pricing

Qty	Low	High
1+	$2.60	$2.60

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI8817DB-T2-E1 Features

P-Channel MOSFET with -20V breakdown voltage.
Continuous drain current of 2.9A.
Low Rds On of 76 mOhms.
Compact MICRO-FOOT 0.8 x 0.8 package.
Wide operating temperature range.

SI8817DB-T2-E1 Applications

Suitable for power switching circuits.
Ideal for general purpose applications.
Used in compact electronic designs.
Efficient for low voltage applications.

SI8817DB-T2-E1 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage for the SI8817DB-T2-E1?

-20V

What is the continuous drain current of the SI8817DB-T2-E1 MOSFET?

2.9A

What is the Rds On for the SI8817DB-T2-E1?

76 mOhms

What is the minimum operating temperature for this MOSFET?

-55°C

What is the package type for the SI8817DB-T2-E1?

MICRO-FOOT 0.8 x 0.8

How is the SI8817DB-T2-E1 mounted?

SMD/SMT