| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200,000 pcs
|
200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI8817DB-T2-E1 is a P-Channel TrenchFET power MOSFET designed for applications such as load switches, chargers, and DC/DC converters. It offers a drain-source voltage (Vds) of -20V and a continuous drain current (ID) of up to 2.9A under specific conditions.
Key electrical characteristics include a maximum on-resistance (Rds On) of 76mOhm at 1A and 4.5V Vgs, and a gate charge (Qg) of 19nC at 8V Vgs. The device operates within a temperature range of -55°C to 150°C.
This MOSFET is housed in a compact 0.8mm x 0.8mm MICRO FOOT package, making it suitable for space-constrained designs. It is surface mountable and designed for efficient power management in portable electronics like smartphones and tablet PCs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is -20 V.
The maximum continuous drain current is -2.9 A at TA = 25 °C.
The operating junction and storage temperature range is -55 °C to +150 °C.
The SI8817DB-T2-E1 is available in a MICRO FOOT 0.8 x 0.8 package with a 4-Microfoot supplier device package.
The maximum on-resistance is 76 mOhm at Vgs = 4.5 V and Id = 1 A.
The maximum gate threshold voltage is 1 V at Id = 250 µA.