| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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28,020 pcs
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28020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI8812DB-T2-E1 is an N-Channel MOSFET designed for power management applications. It offers a drain-source voltage of 20V and a continuous drain current of up to 3.2A depending on ambient temperature.
Key electrical characteristics include a low on-resistance of 59mOhm at 1A and 4.5V, and a gate charge of 6.3nC typical. The MOSFET operates within a temperature range of -55°C to 150°C.
This device is packaged in a 4-Microfoot (4-UFBGA) surface-mount package, making it suitable for space-constrained designs. Its applications include load switching with low voltage drop and general power management in devices like smartphones and tablet PCs.
The SI8812DB-T2-E1 is lead (Pb)-free and halogen-free, aligning with environmental compliance standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 20 V.
The maximum continuous drain current at 25°C is 3.2 A.
The Rds On (Max) at 1A, 4.5V is 59 mOhm.
The operating temperature range is -55°C to 150°C.
The SI8812DB-T2-E1 is in a 4-UFBGA package, also referred to as 4-Microfoot.
The SI8812DB-T2-E1 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1.