SI8809EDB-T2-E1 The Vishay Dale SI8809EDB-T2-E1 is a P-Channel MOSFET with a 20V Drain-Source Voltage and a continuous current rating of 1.94A. It features a low Rds On of 90mOhm at 4.5V.
Mfr Part #:

SI8809EDB-T2-E1

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI8809EDB-T2-E1 is a P-Channel MOSFET with a 20V Drain-Source Voltage and a continuous current rating of 1.94A. It features a low Rds On of 90mOhm at 4.5V.
✓ Total Stock: 1,355 pcs
$ Price Range: $0.99

SI8809EDB-T2-E1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,355 pcs
1355 pcs On Request 1 On Request On Request On Request On Request On Request

SI8809EDB-T2-E1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI8809EDB-T2-E1 Description

Short technical summary and product information.

The Vishay Dale SI8809EDB-T2-E1 is a P-Channel TrenchFET® power MOSFET designed for portable devices. It offers an ultra-small 0.8 mm x 0.8 mm outline and an ultra-thin 0.357 mm height, making it suitable for space-constrained applications like load and battery switches in cell phones, smart phones, tablet PCs, and media players.

 

Key electrical specifications include a Drain-Source Voltage (Vds) of 20V and a maximum continuous drain current of 1.94A at 25°C ambient temperature. The on-resistance (Rds On) is as low as 90mOhm at a gate-source voltage (Vgs) of 4.5V. It operates within a temperature range of -55°C to 150°C.

 

This MOSFET is surface-mounted and comes in a 4-Microfoot package. It also features typical ESD protection of 1000V HBM and high-speed switching capabilities. The ordering information indicates it is lead (Pb)-free and halogen-free.

SI8809EDB-T2-E1 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI8809EDB-T2-E1 P-Channel 20V MOSFET
Subcategory: P-Channel

SI8809EDB-T2-E1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: lead (Pb)-free

SI8809EDB-T2-E1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI8809EDB-T2-E1 Features

  • Ultra small 0.8 mm x 0.8 mm outline.
  • Ultra thin 0.357 mm height.
  • Typical ESD protection 1000 V HBM.
  • High speed switching capability.
  • Lead (Pb)-free and halogen-free.

SI8809EDB-T2-E1 Applications

  • Used in portable devices.
  • Functions as a load switch.
  • Functions as a battery switch.

SI8809EDB-T2-E1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the Drain-Source Voltage (Vds) for the SI8809EDB-T2-E1?

The Drain-Source Voltage (Vds) is 20 V.

What is the maximum continuous drain current for the SI8809EDB-T2-E1?

The maximum continuous drain current is 1.94 A at 25°C ambient temperature.

What is the Rds On (Max) for the SI8809EDB-T2-E1?

The Rds On (Max) is 90 mOhm at 1.5A drain current and 4.5V gate-source voltage.

What is the operating temperature range for the SI8809EDB-T2-E1?

The operating temperature range is -55°C to 150°C.

What package type is the SI8809EDB-T2-E1 available in?

The SI8809EDB-T2-E1 is available in a 4-XFBGA package, also referred to as 4-Microfoot.

Is the SI8809EDB-T2-E1 RoHS compliant?

The SI8809EDB-T2-E1 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the SI8809EDB-T2-E1?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

Home
Account

Categories