| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,193 pcs
|
2193 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
1,443 pcs
|
1443 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI8808DB-T2-E1 is an N-Channel MOSFET designed for applications requiring high-speed switching and efficient power management. It boasts a maximum drain-source voltage of 30V and a continuous drain current of up to 1.8A at 25°C ambient temperature.
Key electrical characteristics include a low on-resistance of 95mOhm at 1A and 4.5V Vgs, and a gate-source threshold voltage of 900mV at 250µA. The input capacitance is 330pF at 15V, and the gate charge is a maximum of 10nC at 8V.
This MOSFET is housed in a small 0.8 mm x 0.8 mm outline area, specifically a 4-UFBGA (4-Microfoot) package, making it suitable for space-constrained designs. It operates within a temperature range of -55°C to 150°C (TJ).
Applications for the SI8808DB-T2-E1 include load switching, DC/DC converters, and use in smart phones, tablet PCs, and mobile computing devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V
1.8 A at 25°C ambient temperature.
95 mΩ at Vgs=4.5V, Id=1A.
-55°C to 150°C (junction temperature).
4-UFBGA (Microfoot) for surface mount.
900 mV at 250 µA.
330 pF at Vds=15V.