| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Number of Channels | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI8802DB-T2-E1 is an N-Channel power MOSFET designed for applications requiring low voltage drop and efficient switching. It features TrenchFET technology, offering low on-resistance characteristics with a maximum of 54mOhm at 1A and 4.5V Vgs.
This MOSFET operates with a drain-source voltage (Vds) of 8V and a gate-source voltage (Vgs) of ±5V. The continuous drain current (Id) is rated at 3.5A at 25°C ambient temperature. Key electrical parameters include a gate charge (Qg) of 4.3 nC typical and a gate-source threshold voltage (Vgs(th)) of 700mV maximum at 250µA.
Packaged in a compact 4-Microfoot (4-XFBGA) surface-mount package, the SI8802DB-T2-E1 is suitable for space-constrained designs. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 0.5W at 25°C. The device is RoHS3 compliant and halogen-free.
Applications include load switching for low voltage power lines (1.2V, 1.5V, 1.8V) in portable devices such as smartphones, tablet PCs, and media players.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 8V.
The continuous drain current is 3A at Ta = 25°C (3.5A per datasheet), and 2.8A at Ta = 70°C.
The on-resistance is typically 54mOhm at VGS = 4.5V, 60mOhm at VGS = 2.5V, and 86mOhm at VGS = 1.5V.
The operating junction and storage temperature range is -55°C to +150°C.
It is available in a 4-XFBGA (4-Microfoot) surface-mount package.
The gate-source threshold voltage is 700mV maximum at 250µA drain current.