| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,020 pcs
|
10020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7,953 pcs
|
7953 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| ESD Protection | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Siliconix SI8800EDB-T2-E1 is an N-Channel TrenchFET power MOSFET designed for portable electronic devices. It offers a 20V drain-source voltage and a maximum continuous drain current of 2A at 25°C ambient temperature.
Key electrical characteristics include a low on-resistance of 80mOhm at 1A and 4.5V Vgs, and a typical gate charge of 3.2 nC. The device operates within a temperature range of -55°C to 150°C.
Packaged in an ultra-small 0.8 mm x 0.8 mm outline (4-Microfoot), this MOSFET is suitable for space-constrained applications such as load switches and small signal switches in cell phones, smartphones, and MP3 players. It also features typical ESD protection of 1500V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 20V.
The maximum continuous drain current at 25°C is 2.8A.
The typical gate charge is 3.2 nC.
The operating temperature range is -55°C to +150°C.
It is supplied in a 4-Microfoot package.
Yes, it is RoHS3 Compliant.