| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
602,667 pcs
|
602667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
136,020 pcs
|
136020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
773 pcs
|
773 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI8499DB-T2-E1 is a P-Channel TrenchFET® power MOSFET designed for applications in portable devices. It features a 20V drain-source voltage and a continuous drain current of up to 16A at 25°C case temperature.
This MOSFET offers low on-resistance, with values as low as 0.032 Ohm at VGS = -4.5V. It operates over a wide temperature range from -55°C to 150°C. The device is housed in an ultra-small 1.5 mm x 1 mm MICRO FOOT® package, making it suitable for space-constrained designs.
Key electrical characteristics include a gate-source voltage range of ±12V and a gate charge of 14.5 nC typical. The MOSFET is suitable for load switch, charger switch, and battery switch applications, contributing to low power consumption and increased battery life in portable electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is -20V.
The continuous drain current (Id) is -16A at Tc=25°C and -7.8A at Ta=25°C.
The maximum on-resistance (Rds(on)) is 32mOhm at Vgs=-4.5V and Id=1.5A.
The device is available in a 6-UFBGA (Micro Foot) package, surface mount.
The operating junction temperature range is -55°C to 150°C.
The maximum gate charge (Qg) is 30nC at Vgs=-5V, typical 14.5nC.