SI8489EDB-T2-E1 The Vishay Dale SI8489EDB-T2-E1 is a P-Channel MOSFET with a 20V Drain-Source Voltage and a maximum Rds On of 44mOhm at 1.5A, 10V. It is available in a compact 4-UFBGA package.
Mfr Part #:

SI8489EDB-T2-E1

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI8489EDB-T2-E1 is a P-Channel MOSFET with a 20V Drain-Source Voltage and a maximum Rds On of 44mOhm at 1.5A, 10V. It is available in a compact 4-UFBGA package.
✓ Total Stock: 25,000 pcs
$ Price Range: $0.99

SI8489EDB-T2-E1 Available from 1 distributor

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✓ Non-Authorised
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25,000 pcs
25000 pcs On Request 1 On Request On Request On Request On Request On Request

SI8489EDB-T2-E1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI8489EDB-T2-E1 Description

Short technical summary and product information.

The Vishay Dale SI8489EDB-T2-E1 is a P-Channel MOSFET designed for applications requiring efficient power switching. It features a Drain-Source Voltage (Vdss) of 20V and a low on-resistance of 44mOhm at a gate-source voltage of 10V and a drain current of 1.5A. The device can handle a continuous drain current of up to 3.06A at 25°C ambient temperature.

 

This MOSFET is housed in a small 4-UFBGA (4-Microfoot) package, suitable for surface mounting. Its operating temperature range is from -55°C to 150°C (TJ). Key electrical characteristics include a gate charge of 27nC (max) at 10V and an input capacitance of 765pF (max) at 10V. The device also offers typical ESD protection of 2500V HBM.

 

Applications for the SI8489EDB-T2-E1 include load switches, charger switches, and battery management systems, particularly in portable electronics like smartphones and tablet PCs. Its TrenchFET power MOSFET technology contributes to its performance and small outline area.

SI8489EDB-T2-E1 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI8489EDB-T2-E1 P-Channel 20V MOSFET
Subcategory: P-Channel

SI8489EDB-T2-E1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI8489EDB-T2-E1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI8489EDB-T2-E1 Features

  • P-Channel 20V MOSFET
  • Low 44mOhm Rds On
  • 3.06A Continuous Drain Current
  • Compact 4-UFBGA package
  • 2500V HBM ESD protection

SI8489EDB-T2-E1 Applications

  • Ideal for load switches
  • Suitable for charger switches
  • Used in battery management
  • Designed for smartphones
  • Applicable to tablet PCs

SI8489EDB-T2-E1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the Drain-Source Breakdown Voltage?

The Drain-Source Breakdown Voltage is -20 V.

What is the maximum Gate-Source Voltage?

The maximum Gate-Source Voltage is ±12V.

What is the maximum On-Resistance?

The maximum On-Resistance is 44mOhm at 1.5A, 10V.

What is the continuous drain current?

The continuous drain current is 3.06A at 25°C ambient temperature.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What type of package is used?

The package type is 4-UFBGA, also referred to as 4-Microfoot.

How is this component mounted?

This component is designed for surface mounting.

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