SI8487DB-T1-E1 The Vishay Dale SI8487DB-T1-E1 is a P-Channel MOSFET with a 30V drain-source voltage rating. It offers low on-resistance and is suitable for various switching applications.
Mfr Part #:

SI8487DB-T1-E1

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI8487DB-T1-E1 is a P-Channel MOSFET with a 30V drain-source voltage rating. It offers low on-resistance and is suitable for various switching applications.
✓ Total Stock: 4,847 pcs
$ Price Range: $0.99

SI8487DB-T1-E1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,847 pcs
4847 pcs On Request 1 4 On Request 13+ On Request On Request

SI8487DB-T1-E1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI8487DB-T1-E1 Description

Short technical summary and product information.

The Vishay Dale SI8487DB-T1-E1 is a P-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage of 30V and a low on-resistance, with a typical value of 31mOhm at 2A and 10V gate-source voltage.

 

This MOSFET has a continuous drain current rating of 4.9A at 25°C ambient temperature. It is housed in an ultra-small 1.6 mm x 1.6 mm, ultra-thin 0.6 mm maximum height 4-Microfoot package, suitable for surface mounting.

 

Key electrical characteristics include a gate-source voltage range of ±12V and a gate charge of 80 nC. The operating temperature range is from -55°C to +150°C.

 

Applications for this device include mobile computing, smartphones, and tablet PCs, serving as a load switch, battery switch, charger switch, or OVP switch.

SI8487DB-T1-E1 Quick Information

Product Type: MOSFET
Canonical Name: P-Channel 30 V (D-S) MOSFET
Subcategory: P-Channel

SI8487DB-T1-E1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI8487DB-T1-E1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI8487DB-T1-E1 Features

  • P-Channel 30V MOSFET
  • Low on-resistance: 31mOhm max
  • Continuous drain current 4.9A
  • Ultra-small 1.6mm x 1.6mm package
  • Surface mountable design

SI8487DB-T1-E1 Applications

  • Mobile computing load switch
  • Smartphone battery switch
  • Tablet PC charger switch
  • OVP switch applications

SI8487DB-T1-E1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating for the SI8487DB-T1-E1?

The drain-source voltage rating is 30V.

What is the maximum continuous drain current for the SI8487DB-T1-E1?

The maximum continuous drain current is 4.9A at 25°C ambient temperature.

What is the on-resistance of the SI8487DB-T1-E1?

The maximum on-resistance is 31mOhm at 2A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to +150°C.

What package type is the SI8487DB-T1-E1 supplied in?

It is supplied in a 4-Microfoot package.

Is the SI8487DB-T1-E1 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the SI8487DB-T1-E1?

The Moisture Sensitivity Level is 1.

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