| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,020 pcs
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4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The Vishay Dale SI8483DB-T2-E1 is a P-Channel TrenchFET power MOSFET designed for load switching applications in smart phones, tablet PCs, and mobile computing. It offers low voltage drop, low power consumption, and increased battery life.
Key electrical specifications include a drain-source voltage (Vds) of 12V and a continuous drain current (Id) of up to 16A at 25°C case temperature. The on-resistance (RdsOn) is as low as 0.026 Ohm at a Vgs of -4.5V. The device operates over a wide temperature range of -55°C to +150°C.
Packaged in an ultra-small 1.5 mm x 1 mm MICRO FOOT® package, the SI8483DB-T2-E1 is suitable for space-constrained designs. It features a surface mount type and is compatible with standard reflow soldering processes up to 260°C.
This MOSFET is RoHS and Halogen-free compliant, making it suitable for various electronic applications requiring efficient power management.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) for the SI8483DB-T2-E1 is 12V.
The maximum continuous drain current (Id) is 16A at a case temperature of 25°C.
The Rds On is a maximum of 0.026 Ohm at a drain current of 1.5A and a gate-source voltage of 4.5V.
The operating junction and storage temperature range is -55°C to +150°C.
The SI8483DB-T2-E1 is in a 6-UFBGA package, also referred to as 6-Micro Foot™ (1.5x1).
Yes, the SI8483DB-T2-E1 is RoHS3 Compliant.
Yes, the SI8483DB-T2-E1 is Lead (Pb)-free and Halogen-free.