| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,300 pcs
|
2300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| ESD Protection | |
| FET Type | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI8475EDB-T1-E1 is a P-Channel MOSFET designed for load and battery switch applications in portable devices. It offers a 20V drain-source voltage and a continuous drain current of up to 4.9A at 25°C ambient temperature.
This MOSFET utilizes TrenchFET technology and comes in a compact 4-Microfoot package, suitable for surface mounting. Key electrical characteristics include a low on-resistance of 32mOhm at 1A and 4.5V Vgs, and a gate-source overvoltage protection feature. The operating temperature range is -55°C to 150°C.
It is specified as lead (Pb)-free and halogen-free, making it suitable for various environmental requirements. The device also includes typical ESD protection of 3000V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is -20V.
The maximum continuous drain current is -7.7A at TA = 25°C.
The typical on-resistance is 32mOhm at VGS = -4.5V.
The operating junction and storage temperature range is -55°C to 150°C.
Yes, it has typical ESD protection of 3000V.
The maximum gate threshold voltage is 1.5V at 250µA.
The package is 4-XFBGA or CSPBGA, with a supplier device package of 4-Microfoot.