| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
19,020 pcs
|
19020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI8472DB-T2-E1 is an N-Channel MOSFET designed for various electronic applications. It offers a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 3.3A at 25°C ambient temperature. The MOSFET exhibits a low on-resistance (Rds On) of 44mOhm at a gate-source voltage (Vgs) of 4.5V and a drain current of 1.5A.
This device operates within a temperature range of -55°C to 150°C. It features a gate-source voltage (Vgs) maximum of ±8V and a gate threshold voltage (Vgs(th)) of 900mV at 250µA. The input capacitance (Ciss) is 630pF at 10V, and the gate charge (Qg) is 18nC at 8V. The maximum power dissipation is 780mW at 25°C ambient temperature.
The SI8472DB-T2-E1 utilizes TrenchFET® power MOSFET technology and comes in an ultra-small 1mm x 1mm outline, with an ultra-thin height of 0.548mm. It is housed in a 4-MICRO FOOT® (1x1) package, suitable for surface mounting. This component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
4-UFBGA with 4-MICRO FOOT (1x1) supplier package.
-55°C to 150°C.
900mV at 250µA drain current.
44mOhm maximum at 1.5A and 4.5V gate drive.
18nC maximum at 8V gate-source voltage.
3.3A at 25°C ambient temperature.