| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
110 pcs
|
110 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
90 pcs
|
90 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Voltage |
The Vishay Dale SI8457DB-T1-E1 is a P-Channel MOSFET designed for power management applications. It utilizes TrenchFET® p-channel Gen III and MICRO FOOT power MOSFET technology, offering extremely low on-resistance per outline area.
Key electrical specifications include a maximum drain-source voltage (Vds) of 12V and a maximum on-resistance (Rds On) of 19mOhm at 3A and 4.5V Vgs. The continuous drain current (Id) is rated at 6.5A at 25°C ambient temperature, with a maximum power dissipation of 1.1W (Ta).
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It features a gate charge (Qg) of 93 nC at 8V Vgs and a gate threshold voltage (Vgs(th)) of 900mV at 250µA Id. The input capacitance (Ciss) is a maximum of 2900 pF at 6V Vds.
The device is housed in an ultra-small 1.6 mm x 1.6 mm MICRO FOOT® package with an ultra-thin height of 0.6 mm. It is suitable for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
12V.
4-UFBGA (4-MICRO FOOT® 1.6x1.6mm).
-55°C to 150°C junction temperature.
19mOhm maximum at 3A and 4.5V gate drive.
6.5A at 25°C ambient temperature.
900mV maximum at 250µA drain current.
93nC maximum at 8V gate-source voltage.