SI8425DB-T1-E1 P-Channel MOSFET with -20V drain-source voltage in a compact 4-WLCSP package.
Mfr Part #:

SI8425DB-T1-E1

Available from 2 distributors
Mfr Name: Vishay
Vishay
P-Channel MOSFET with -20V drain-source voltage in a compact 4-WLCSP package.
✓ Total Stock: 13,020 pcs
$ Price Range: $0.99

SI8425DB-T1-E1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,020 pcs
7020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request 19+ On Request On Request

SI8425DB-T1-E1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI8425DB-T1-E1 Description

Short technical summary and product information.

The SI8425DB-T1-E1 is a P-Channel MOSFET manufactured by Vishay Dale. It features a maximum drain-source voltage (Vdss) of -20 V, making it suitable for low voltage power management applications. The device is housed in a compact 4-WLCSP (4-pin Wafer-Level Chip Scale Package) which allows for significant space savings in dense PCB designs. As a surface-mount component, it is compatible with standard automated assembly processes, enabling efficient manufacturing for portable and battery-powered electronics.

SI8425DB-T1-E1 Quick Information

Product Type: P-Channel MOSFET
Canonical Name: SI8425DB-T1-E1
Subcategory: Single

SI8425DB-T1-E1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI8425DB-T1-E1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI8425DB-T1-E1 Features

  • P-channel 20 V MOSFET
  • TrenchFET power MOSFET technology
  • Ultra-small 1.6 mm footprint
  • Ultra-thin 0.6 mm profile
  • Low on-resistance for efficiency

SI8425DB-T1-E1 Applications

  • Used in battery protection circuits for portable devices.
  • Ideal for power distribution switches in mobile electronics.
  • Suitable for load switching in IoT modules.

SI8425DB-T1-E1 FAQs

3 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SI8425DB-T1-E1?

-20 V

What is the package type of the SI8425DB-T1-E1 MOSFET?

4-WLCSP (4-pin Wafer-Level Chip Scale Package)

Is this MOSFET P-channel or N-channel?

P-channel

Home
Account

Categories