| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,420 pcs
|
1420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI8424CDB-T1-E1 is an N-Channel MOSFET manufactured by Vishay Dale. It features a maximum drain-to-source voltage (Vdss) of 8V and a maximum continuous drain current of 6.3A at an ambient temperature of 25°C. The device has a maximum on-resistance of 0.02 Ohm at a gate-source voltage of 4.5V and a drain current of 2A.
This MOSFET offers a maximum gate charge of 40 nC at Vgs = 4.5V, with a typical gate charge of 25 nC. The input capacitance is rated at a maximum of 2340 pF at Vds = 4V. The maximum power dissipation is 1.1W at Ta = 25°C and 2.7W at Tc = 25°C.
The device is designed for surface mount applications and is packaged in a 4MICROFOOT package. It is suitable for low-voltage switching applications where high efficiency and compact size are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 8V.
The maximum continuous drain current is 6.3A at an ambient temperature of 25°C.
The maximum on-resistance is 0.02 Ohm at a gate-source voltage of 4.5V and a drain current of 2A.
The maximum gate threshold voltage is 800mV at a drain current of 250µA.
The maximum power dissipation is 1.1W at an ambient temperature of 25°C.