| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
217,020 pcs
|
217020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI8416DB-T2-E1 is an N-Channel MOSFET utilizing TrenchFET technology, optimized for low on-resistance and low power consumption in portable applications. It offers a drain-source voltage of 8V and a continuous drain current of up to 16A.
Key electrical characteristics include a maximum on-resistance of 23mΩ at 1.5A and 4.5V Vgs, with various Rds(on) values specified for different gate drive voltages down to 1.2V. The device has a gate charge of 26nC at 4.5V Vgs and an input capacitance of 1470pF at 4V Vds.
Designed for space-saving on PCBs, the SI8416DB-T2-E1 comes in an ultra-small 1.5 mm x 1 mm 6-Micro Foot package with an ultra-thin height of 0.59 mm. It operates over a wide temperature range of -55°C to 150°C.
This MOSFET is suitable for applications requiring low voltage drop and increased battery life, such as load switching in portable electronic devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
8V.
6-UFBGA (6-Micro Foot) surface mount package.
-55°C to 150°C.
23mΩ maximum.
0.8V maximum at 250µA.
16A.
20A (t = 300 μs).