SI8409DB-T1-E1 The Vishay Dale SI8409DB-T1-E1 is a P-Channel MOSFET with a 30V drain-source voltage and 4.6A continuous drain current. It features a low on-resistance and is available in a compact 4-Microfoot package.
Mfr Part #:

SI8409DB-T1-E1

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI8409DB-T1-E1 is a P-Channel MOSFET with a 30V drain-source voltage and 4.6A continuous drain current. It features a low on-resistance and is available in a compact 4-Microfoot package.
✓ Total Stock: 423,365 pcs
$ Price Range: $0.99

SI8409DB-T1-E1 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
401,778 pcs
401778 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
19,020 pcs
19020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,567 pcs
2567 pcs On Request 1 On Request On Request 1107+ On Request On Request

SI8409DB-T1-E1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI8409DB-T1-E1 Description

Short technical summary and product information.

The Vishay Dale SI8409DB-T1-E1 is a P-Channel MOSFET designed for portable device applications such as load switches, battery switches, and PA switches. It offers a drain-source voltage of 30V and a continuous drain current of up to 4.6A at 25°C ambient temperature.

 

This MOSFET boasts a low on-resistance of 0.046 Ohms at Vgs = -4.5V, contributing to efficient power management. It is built using TrenchFET® technology and packaged in a MICRO FOOT® chipscale package, measuring 1.6 x 1.6 mm, which reduces footprint area and profile.

 

The operating temperature range is from -55°C to 150°C. The device is surface mounted and compatible with standard reflow soldering processes.

 

Key electrical characteristics include a gate-source voltage range of ±12V and a gate threshold voltage of 1.4V. The maximum power dissipation is 1.47W at 70°C ambient temperature.

SI8409DB-T1-E1 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI8409DB-T1-E1 P-Channel 30V MOSFET
Subcategory: P-Channel

SI8409DB-T1-E1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI8409DB-T1-E1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI8409DB-T1-E1 Features

  • P-Channel 30V MOSFET for portable devices.
  • Low Rds(on) of 0.046 Ohm at Vgs = -4.5V.
  • Compact 1.6 x 1.6 mm MICRO FOOT® package.
  • Surface mountable for easy integration.
  • Wide operating temperature range.

SI8409DB-T1-E1 Applications

  • Ideal for load switch applications.
  • Suitable for battery switch functions.
  • Used in PA switch circuits.
  • Designed for portable devices.

SI8409DB-T1-E1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI8409DB-T1-E1?

The drain-source voltage is 30V.

What is the continuous drain current of the SI8409DB-T1-E1?

The continuous drain current is 4.6A at 70°C and 6.3A at 25°C.

What is the on-resistance of the SI8409DB-T1-E1?

The on-resistance is 0.046 Ohms at Vgs = -4.5V.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What package type is the SI8409DB-T1-E1 in?

It is in a 4-Microfoot package, also described as 4-XFBGA, CSPBGA.

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