| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
401,778 pcs
|
401778 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
19,020 pcs
|
19020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,567 pcs
|
2567 pcs | On Request | 1 | On Request | On Request | 1107+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
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| Operating Temperature | |
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| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI8409DB-T1-E1 is a P-Channel MOSFET designed for portable device applications such as load switches, battery switches, and PA switches. It offers a drain-source voltage of 30V and a continuous drain current of up to 4.6A at 25°C ambient temperature.
This MOSFET boasts a low on-resistance of 0.046 Ohms at Vgs = -4.5V, contributing to efficient power management. It is built using TrenchFET® technology and packaged in a MICRO FOOT® chipscale package, measuring 1.6 x 1.6 mm, which reduces footprint area and profile.
The operating temperature range is from -55°C to 150°C. The device is surface mounted and compatible with standard reflow soldering processes.
Key electrical characteristics include a gate-source voltage range of ±12V and a gate threshold voltage of 1.4V. The maximum power dissipation is 1.47W at 70°C ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 30V.
The continuous drain current is 4.6A at 70°C and 6.3A at 25°C.
The on-resistance is 0.046 Ohms at Vgs = -4.5V.
The operating temperature range is -55°C to 150°C.
It is in a 4-Microfoot package, also described as 4-XFBGA, CSPBGA.