SI8406DB-T2-E1 The Vishay Dale SI8406DB-T2-E1 is an N-Channel MOSFET designed for load switching and battery management applications. It offers a 20V drain-source voltage and 16A continuous drain current.
Mfr Part #:

SI8406DB-T2-E1

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI8406DB-T2-E1 is an N-Channel MOSFET designed for load switching and battery management applications. It offers a 20V drain-source voltage and 16A continuous drain current.
✓ Total Stock: 7,020 pcs
$ Price Range: $0.99

SI8406DB-T2-E1 Available from 1 distributor

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✓ Non-Authorised
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7,020 pcs
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SI8406DB-T2-E1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI8406DB-T2-E1 Description

Short technical summary and product information.

The Vishay Dale SI8406DB-T2-E1 is an N-Channel MOSFET with a 20V drain-source voltage rating. It features a maximum continuous drain current of 16A at 25°C case temperature and a low on-resistance of 33mOhm at 1A and 4.5V Vgs.

 

This MOSFET is suitable for applications such as load switching, battery management, and boost converters. It operates within a temperature range of -55°C to 150°C.

 

The device comes in an ultra-small 1.5 mm x 1 mm Micro Foot package, making it ideal for space-constrained designs. Its ultra-thin profile of 0.59 mm maximum height further enhances its suitability for compact electronic devices.

SI8406DB-T2-E1 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI8406DB-T2-E1 N-Channel 20V MOSFET
Subcategory: N-Channel

SI8406DB-T2-E1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI8406DB-T2-E1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI8406DB-T2-E1 Features

  • N-Channel 20V MOSFET
  • 16A continuous drain current
  • 33mOhm max Rds On
  • 1.5mm x 1mm Micro Foot package
  • Ultra-thin 0.59mm height

SI8406DB-T2-E1 Applications

  • Load switching in portable electronics.
  • Power management in battery-powered devices.
  • DC-DC converter applications.
  • Low-voltage motor control.
  • General purpose switching circuits.

SI8406DB-T2-E1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SI8406DB-T2-E1?

20V.

What is the maximum continuous drain current?

16A at Tc=25°C.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What is the package type?

6-UFBGA (6-Micro Foot 1.5x1).

Does it support logic-level gate drive?

Yes, the gate threshold voltage is 850mV maximum, and drive voltage range is 1.8V to 4.5V.

What is the on-resistance?

33mOhm maximum at Vgs=4.5V and Id=1A.

What is the maximum power dissipation?

13W at Tc=25°C and 2.77W at Ta=25°C.

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