SI8405DB-T1-E1 The Vishay Dale SI8405DB-T1-E1 is a P-Channel MOSFET designed for surface mount applications. It features a 12V drain-to-source voltage and a continuous drain current of 3.6A.
Mfr Part #:

SI8405DB-T1-E1

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI8405DB-T1-E1 is a P-Channel MOSFET designed for surface mount applications. It features a 12V drain-to-source voltage and a continuous drain current of 3.6A.
✓ Total Stock: 7,000 pcs
$ Price Range: $0.99

SI8405DB-T1-E1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request 05+ On Request On Request
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request

SI8405DB-T1-E1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI8405DB-T1-E1 Description

Short technical summary and product information.

The Vishay Dale SI8405DB-T1-E1 is a P-Channel MOSFET with a Metal Oxide semiconductor technology. It is designed for surface mount applications and comes in a 4-Microfoot package, also referred to as 4-XFBGA, CSPBGA.

 

Key electrical characteristics include a drain-to-source voltage of 12V and a continuous drain current of 3.6A at ambient temperature. The gate charge is specified at 21 nC at 4.5V, with a maximum gate-to-source voltage of ±8V. The gate threshold voltage is 950mV at 250µA. The on-resistance (Rds On) is a maximum of 55mOhm at 1A and 4.5Vgs.

 

Thermal performance includes a maximum power dissipation of 1.47W at ambient temperature and an operating temperature range of -55°C to 150°C (TJ). The drive voltage ranges from 1.8V to 4.5V for optimal Rds On performance.

 

This component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1. The REACH status is unaffected.

SI8405DB-T1-E1 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI8405DB-T1-E1 P-Channel MOSFET
Subcategory: Single

SI8405DB-T1-E1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI8405DB-T1-E1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI8405DB-T1-E1 Features

  • P-Channel MOSFET for versatile switching.
  • 12V drain-to-source voltage rating.
  • 3.6A continuous drain current capability.
  • Low 55mOhm Rds On at 1A, 4.5Vgs.
  • Surface mount 4-Microfoot package.

SI8405DB-T1-E1 Applications

  • Ideal for power management circuits.
  • Suitable for battery-powered devices.
  • Used in low-voltage switching applications.
  • Effective in portable electronics designs.

SI8405DB-T1-E1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the SI8405DB-T1-E1?

The drain-to-source voltage (Vdss) is 12V.

What is the continuous drain current of the SI8405DB-T1-E1?

The continuous drain current is 3.6A at ambient temperature.

What is the on-resistance (Rds On) for the SI8405DB-T1-E1?

The maximum on-resistance is 55mOhm at 1A drain current and 4.5V gate-to-source voltage.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI8405DB-T1-E1 in?

It is in a 4-Microfoot package, also known as 4-XFBGA, CSPBGA.

Is the SI8405DB-T1-E1 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1 Unlimited.

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